Diodes DMN2005LP4K Uživatelský manuál stáhnout pdf

DMN2005LP4K

Document number: DS30799 Rev. 6 - 2

1 of 6

www.diodes.com

June 2012

DMN2005LP4K

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Very Low Gate Threshold Voltage, 0.9V Max.

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• ESD Protected Gate

• Ultra Low Profile Package

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN2005LP4K-7 DN 7 8 3000

DMN2005LP4K-7B DN 7 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

X2-DFN1006-3

Bottom View

Equivalent Circuit

Top View

Pin-Out

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

ESD PROTECTED

DN = Product Type Marking Code

DN DN

DMN2005LP4K-7 DMN2005LP4K-7B

Top View

Bar Denotes Gate

and Source Side

Top View

Dot Denotes

Drain Side

1 2 3 4 5 6

Shrnutí obsahu

Strany 1 - ESD PROTECTED

DMN2005LP4K Document number: DS30799 Rev. 6 - 2 1 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LP4K N-CHANNEL ENHANCEMENT MODE MOSFET

Strany 2 - DMN2005LP4K

DMN2005LP4K Document number: DS30799 Rev. 6 - 2 2 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LP4K Maximum Ratings (@TA = 25°C unl

Strany 3

DMN2005LP4K Document number: DS30799 Rev. 6 - 2 3 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LP4K 00.51.01.52.0012345Fig. 1 Typic

Strany 4

DMN2005LP4K Document number: DS30799 Rev. 6 - 2 4 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LP4K 00.20.40.60.81.01.2Fig. 7 Gate

DMN2005LP4K Document number: DS30799 Rev. 6 - 2 5 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LP4K Package Outline Dimensions

Strany 6

DMN2005LP4K Document number: DS30799 Rev. 6 - 2 6 of 6 www.diodes.com June 2012© Diodes Incorporated DMN2005LP4K IMPORTANT NOTICE DIODES INCOR

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