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SOT89 PNP SILICON POWER

(SWITCHING) TRANSISTOR

ISSUE 3 - OCTOBER 2005

FEATURES

* 2W POWER DISSIPATION

* 6A Peak Pulse Current

*Excellent H

Characteristics

* Low Saturation Voltages

Partmarking Detail - 790

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-50 V

Collector-Emitter Voltage V

CEO

-40 V

Emitter-Base Voltage V

EBO

-5 V

Peak Pulse Current ** I

-6 A

Continuous Collector Current I

-2 A

Power Dissipation at T

amb

=25°C P

tot

1 †

2 ‡

Operating and Storage Temperature Range T

stg

-55 to +150 °C

† recommended P

tot

calculated using FR4 measuring 15x15x0.6mm

‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.

**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for these devices

Refer to the handling instructions when soldering surface mount components.

FCX790A

1 2 3

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Strany 1 - (SWITCHING) TRANSISTOR

SOT89 PNP SILICON POWER(SWITCHING) TRANSISTOR ISSUE 3 - OCTOBER 2005FEATURES* 2W POWER DISSIPATION* 6A Peak Pulse Current*Excellent HFE Characteristic

Strany 2 - = 25°C)

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.Collector-Base BreakdownVoltageV(BR)CBO-50 VIC=-100µAColle

Strany 3 - TYPICAL CHARACTERISTICS

FCX790AD.C. 1s 100ms 10ms1.0ms 0.1ms0.01 0.1 1 100.80.601.60.01 0.1 1 100.01 0.1 1 101.00.80.60.400.21.61.41.20.01 0.11101.00.80.60.40

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