Diodes SD830 – SD860 Uživatelský manuál

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SD830 – SD860
Document number: DS23006 Rev. 7 - 2
1 of 3
www.diodes.com
September 2013
© Diodes Incorporated
SD830
SD860
8.0A SCHOTTKY BARRIER RECTIFIERS
Product Summary @T
A
= +25°C
V
RRM
(V) I
O
(A) V
FMAX
(V) I
RMAX
(μA)
30, 40, 60 8 0.7 100
Description and Applications
8.0 A Schottky Barrier Rectifier in DO-201AD package, offers high
current capability and low forward voltage drop, designed with Guard
Ring for Transient Protection and high surge capacity.
Features and Benefits
High Current Capability and Low Forward Voltage Drop
High Surge Capacity
Guard Ring for Transient Protection
Low Power Loss, High Efficiency
Lead Free Finish, RoHS Compliant (Note 1 & 2)
Mechanical Data
Case: DO-201AD
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Bright Tin. Solderable per MIL-STD-202,
Method 208
Polarity: Cathode band
Mounting Position: Any
Weight: 1.1 grams (approximate)
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol SD830 SD840 SD860 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
RM
30 40
60 V
RMS Reverse Voltage
VR
(RMS)
21 28 42 V
Average Rectified Output Current (See Figure 1)
I
O
8 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
175 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Lead (Note 3) T
A
= +25°C R
θJL
30 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-65 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop
V
F
– 0.55 0.7 V
I
F
= 8A, T
J
= +25°C
Leakage Current
I
R
– –
1.0
50
mA
mA
V
R
= V
RRM
, T
J
= +25°C
V
R
= V
RRM
, T
J
= +100°C
Typical Junction Capacitance (Note 4)
C
J
– 550 – pF
V
R
= 4V, f=1.0 MHz
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exempltions applied.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Thermal resistance from junction to lead vertical PC board mounting, 9.5mm lead length.
4. Measured at 1.0MHz and applied reverse voltage of 4.0V.
Pb
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Shrnutí obsahu

Strany 1 - SD830 – SD860

SD830 – SD860 Document number: DS23006 Rev. 7 - 2 1 of 3 www.diodes.com September 2013© Diodes Incorporated SD830 –SD860 8.0A SCHOTTKY BARRIER

Strany 2 - 8.3 ms Single Half Sine-Wave

SD830 – SD860 Document number: DS23006 Rev. 7 - 2 2 of 3 www.diodes.com September 2013© Diodes Incorporated SD830 –SD860 024681020 40 60 80 100

Strany 3

SD830 – SD860 Document number: DS23006 Rev. 7 - 2 3 of 3 www.diodes.com September 2013© Diodes Incorporated SD830 –SD860 IMPORTANT NOTICE DIODE

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