7
Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited
Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139
Parameter Symbol Conditions Min Typ Max Unit
Input Voltage V
IN
6.6 V
Output Voltage V
OUT
1.176 1.200 1.224 V
Quiescent Current I
Q
I
OUT
=0 1.0 1.5 μA
Standby Current (AP2139) I
STD
V
CE
=0 0.1 1 μA
Output Current I
OUT
250 mA
Load Regulation
V
RLOAD
1mA≤I
OUT
≤100mA
25 40 mV
Line Regulation
V
RLINE
2.2V≤V
IN
≤6V
618mV
Dropout Voltage
V
DROP
I
OUT
=10mA 100 300
mV
I
OUT
=30mA 400 700
I
OUT
=100mA 700 1000
I
OUT
=250mA 1000 1300
Output Voltage
Temperature Coefficient
ΔV
OUT
/ΔT
±140
μV/
o
C
(ΔV
OUT
/V
OUT
)/ΔT
±100
ppm/
o
C
Short Circuit Current
I
SHORT
V
OUT
=0
50 mA
CE Pull-down Constant
Current (AP2139)
I
PD
0.2 μA
CE Input Logic-high
Voltage (AP2139)
V
IH
1.2 V
CE Input Logic-low
Voltage (AP2139)
V
IL
0.3 V
Thermal Resistance
θ
JC
SOT-23-3 81.9
o
C/W
SOT-23-5 81.9
SOT-89 51.1
(V
IN
=2.5V, V
CE
=2.5V (AP2139),T
J
=25
o
C, I
OUT
=40mA, C
IN
=C
OUT
=1μF,
Bold
typeface applies over
-40
o
C
≤T
J
≤
85
o
C,
unless
otherwise specified.)
AP2138/2139-1.2 Electrical Characteristics
Electrical Characteristics
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