Diodes 2N7002K Uživatelský manuál stáhnout pdf (Strana 2)

2N7002K

Document number: DS30896 Rev. 14 - 2

2 of 6

www.diodes.com

August 2013

2N7002K

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

DSS

60 V

Gate-Source Voltage

GSS

±20 V

Continuous Drain Current (Note 6) V

= 10V

Steady

State

= +25°C

= +70°C

380

300

t<5s

= +25°C

= +70°C

430

340

Continuous Drain Current (Note 6) V

= 5V

Steady

State

= +25°C

= +70°C

310

240

t<5s

= +25°C

= +70°C

350

270

Maximum Continuous Body Diode Forward Current (Note 6)

0.5 A

Pulsed Drain Current (10µs pulse, duty cycle = 1%) (Note 6)

1.2 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

370 mW

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

JA

357

°C/W

t<5s 292

Total Power Dissipation (Note 6)

540 mW

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

JA

240

°C/W

t<5s 197

Thermal Resistance, Junction to Case (Note 6 )

JC

Operating and Storage Temperature Range

STG

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

DSS

—

— V

= 0V, I

= 10µA

Zero Gate Voltage Drain Current

DSS

— —

1.0 µA

= 60V, V

= 0V

Gate-Source Leakage

GSS

— —

±10 µA

= ±20V, V

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

(

)

1.0 1.6 2.5 V

= 10V, I

= 1mA

Static Drain-Source On-Resistance

DS(ON)

—

2.0

3.0



= 10V, I

= 0.5A

= 5V, I

= 0.05A

Forward Transfer Admittance

—

— ms

=10V, I

= 0.2A

Diode Forward Voltage

— 0.75 1.1 V

= 0V, I

= 115mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

iss

—

30 50 pF

= 25V, V

= 0V

f = 1.0MHz

Output Capacitance

oss

—

4.2 25 pF

Reverse Transfer Capacitance

rss

—

2.9 5.0 pF

Gate Resistance

—

133 — 

f = 1MHz , V

= 0V, V

= 0V

Total Gate Charge

—

0.3

—

= 4.5V, V

= 10V,

= 250mA

Gate-Source Charge

—

0.2

—

Gate-Drain Charge

—

0.08

—

Turn-On Delay Time

(

)

—

3.9

—

= 30V, V

= 10V,

= 25, I

= 200mA

Turn-On Rise Time

—

3.4

—

Turn-Off Delay Time

(

off

)

—

15.7

—

Turn-Off Fall Time

—

9.9

—

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

1 2 3 4 5 6

Komentáře k této Příručce

Žádné komentáře

Diodes 2N7002K Uživatelský manuál Strana 2

Komentáře k této Příručce

Související produkty a manuály pro Hardware Diodes 2N7002K