Diodes ZXMN6A09G Uživatelský manuál stáhnout pdf

Issue 3 - June 2007 1 www.zetex.com

ZXMN6A09G

60V SOT223 N-channel enhancement mode MOSFET

Summary

Description

This new generation of trench MOSFETs from Zetex utilizes a unique

structure that combines the benefits of low on-resistance with fast

switching speed. This makes them ideal for high efficiency, low voltage

power management applications.

Features

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• SOT223 package

Applications

• DC-DC converters

• Power management functions

• Disconnect switches

• Motor control

Ordering information

Device marking

ZXMN

6A09

(BR)DSS

DS(on)

() I

(A)

0.040 @ V

= 10V 7.5

0.060 @ V

= 4.5V 6.2

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXMN6A09GTA 7 12 1000

Pinout - top view

1 2 3 4 5 6 7 8

ZXMN6A09G 1

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Issue 3 - June 2007 1 www.zetex.com© Zetex Semiconductors plc 2007ZXMN6A09G60V SOT223 N-channel enhancement mode MOSFETSummaryDescriptionThis new gene

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ZXMN6A09GIssue 3 - June 2007 2 www.zetex.com© Zetex Semiconductors plc 2007Absolute maximum ratingsNOTES:(a) For a device surface mounted on 25mm x 25

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ZXMN6A09GIssue 3 - June 2007 4 www.zetex.com© Zetex Semiconductors plc 2007Electrical characteristics (at Tamb = 25°C unless otherwise stated)Paramete

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ZXMN6A09GIssue 3 - June 2007 6 www.zetex.com© Zetex Semiconductors plc 2007Typical characteristicsCurrentregulatorChargeGate charge test circuitSwitch

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ZXMN6A09GIssue 3 - June 2007 7 www.zetex.com© Zetex Semiconductors plc 2007Package outline - SOT223Note: Controlling dimensions are in millimeters. Ap

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ZXMN6A09GIssue 3 - June 2007 8 www.zetex.com© Zetex Semiconductors plc 2007Zetex sales officesEuropeZetex GmbHKustermann-parkBalanstraße 59D-81541 Mün

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