Diodes DMC1229UFDB Uživatelský manuál stáhnout pdf (Strana 3)

DMC1229UFDB

Document number: DS36128 Rev. 4 - 2

3 of 9

www.diodes.com

September 2013

DMC1229UFDB

Electrical Characteristics Q1 N-CHANNEL (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

DSS

—

— V

= 0V, I

= 250A

Zero Gate Voltage Drain Current T

= +25°C

DSS

— —

1.0 A

= 12V, V

= 0V

Gate-Source Leakage

GSS

— —

±100 nA

= ±8V, V

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

(

)

0.4 — 1 V

= V

, I

= 250A

Static Drain-Source On-Resistance

DS (ON)

—

17 29

m

= 4.5V, I

= 5A

—

20 34

= 2.5V, I

= 4.6A

—

24 44

= 1.8V, I

= 4.1A

—

30 65

= 1.5V, I

= 2A

Forward Transfer Admittance

—

6.5 — S

= 10V, I

= 5A

Diode Forward Voltage

—

0.6 1.2 V

= 0V, I

= 1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

iss

— 914 —

= 6V, V

= 0V,

f = 1.0MHz

Output Capacitance

oss

— 132 —

Reverse Transfer Capacitance

rss

— 119 —

Gate Resistance

— 1.26 —



= 0V, V

= 0V, f = 1MHz

Total Gate Charge (V

= 4.5V)

— 10.5 —

= 6V, I

= 6.5A

Total Gate Charge (V

= 8V)

— 19.6 —

Gate-Source Charge

— 1.2 —

Gate-Drain Charge

— 1.6 —

Turn-On Delay Time

(

)

— 5.0 —

= 6V, V

= 4.5V,

= 1.2, R

= 1

Turn-On Rise Time

— 10.5 —

Turn-Off Delay Time

(

off

)

— 16.6 —

Turn-Off Fall Time

— 4.1 —

Electrical Characteristics Q2 P-CHANNEL (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

DSS

-12 — — V

= 0V, I

= -250A

Zero Gate Voltage Drain Current T

= +25°C

DSS

— —

-1.0 A

= -12V, V

= 0V

Gate-Source Leakage

GSS

— —

±100 nA

= ±8V, V

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

(

)

-0.4 — -1 V

= V

, I

= -250A

Static Drain-Source On-Resistance

DS (ON)

—

37 61

m

= -4.5V, I

= -3.6A

—

47 81

= -2.5V, I

= -3.2A

—

63 115

= -1.8V, I

= -1A

—

90 170

= -1.5V, I

= -1A

Forward Transfer Admittance

—

5.5 — S

= -10V, I

= -3.6A

Diode Forward Voltage

—

-0.65 -1.2 V

= 0V, I

= -1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

iss

— 915 —

= -6V, V

= 0V,

f = 1.0MHz

Output Capacitance

oss

— 225 —

Reverse Transfer Capacitance

rss

— 183 —

Gate Resistance

— 56.9 —



= 0V, V

= 0V, f = 1MHz

Total Gate Charge (V

= -4.5V)

— 10.7 —

= -6V, I

= -4.3A

Total Gate Charge (V

= -8V)

— 17.9 —

Gate-Source Charge

— 1.7 —

Gate-Drain Charge

— 3.0 —

Turn-On Delay Time

(

)

— 5.7 —

= -6V, V

= -4.5V,

= 1.6, R

= 1

Turn-On Rise Time

— 11.5 —

Turn-Off Delay Time

(

off

)

— 27.8 —

Turn-Off Fall Time

— 26.4 —

Notes: 6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

1 2 3 4 5 6 7 8 9

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