Diodes DMN62D0LFD Uživatelský manuál stáhnout pdf (Strana 4)

DMN62D0LFD

Document number: DS36359 Rev. 2 - 2

4 of 6

www.diodes.com

May 2014

DMN62D0LFD

ADVANCE INFORMATION

NEW PRODUCT

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

0.4

0.6

0.8

LD V

E (V)

GS(th)

I= 1mA

I = 250µA

1.0

V , SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

I, S

(A)

0.1

0.2

0.3

0.4

0.5

0 0.3 0.6 0.9 1.2 1.5

T= 25°C

, JUN

APA

ITAN

E (pF)

iss

f = 1MHz

oss

rss

100

0 10203040

V , DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Junction Capacitance

Q(nC)

, TOTAL GATE CHARGE

Figure 10 Gate Charge

LD V

E (V)

0 0.2 0.4 0.6 0.8 1.0 1.2

V = 10V

I= A

250m

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

t1, PULSE DURATION TIME (sec)

Figure 11 Transient Thermal Resistance

0.001

0.01

0.1

r(t), TRANSIENT THERMAL RESISTANCE

D = 0.5

D = 0.7

D = 0.9

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

R (t) = r(t) * R

R = 256°C/W

Duty Cycle, D = t1/ t2

θθ

JA JA

0.000001

1 2 3 4 5 6

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