Diodes DSS2540M Uživatelský manuál stáhnout pdf (Strana 2)

DSS2540M

Document number: DS31820 Rev. 3 - 2

2 of 5

www.diodes.com

January 2011

DSS2540M

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

CBO

40 V

Collector-Emitter Voltage

CEO

40 V

Emitter-Base Voltage

EBO

6 V

Collector Current - Continuous

500 mA

Peak Pulse Collector Current

1 A

Peak Base Current

100 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 4) @ T

= 25°C P

250 mW

Thermal Resistance, Junction to Ambient (Note 4) @ T

= 25°C

500

°C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150

°C

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.

0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000

Fig. 1 Transient Thermal Response

t , PULSE DURATION TIME (s)

0.00001

0.001

0.01

0.1

r(t),

ANSIEN

MAL

ESIS

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA

R (t) = r(t) *

R = 500°C/W

P(pk)

D = 0.7

D = 0.5

D = 0.3

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.1

0.1

100

1,000

1E-06 0.0001 0.01 1 100 10,000

Fig. 2 Single Pulse Maximum Power Dissipation

t , PULSE DURATION TIME (s)

P(pk), PEAK T

ANSIENT P

(W)

Single Pulse

T - T = P * R (t)

JA JA

R (t) = r(t) *

R = 500°C/W

0 50 100 150 200

T , AMBIENT TEMPERATURE ( C)

Fig. 3 Power Dissipation vs. Ambient Temperature (Note 4)

0.05

0.10

0.15

0.30

DISSI

N (W)

0.20

0.25

R = 500°C/W

1 2 3 4 5

Komentáře k této Příručce

Žádné komentáře

Diodes DSS2540M Uživatelský manuál Strana 2

Komentáře k této Příručce

Související produkty a manuály pro Hardware Diodes DSS2540M