
DSS5240T
Document number: DS31591 Rev. 4 - 2
4 of 7
www.diodes.com
May 2014
© Diodes Incorporated
DSS5240T
NEW PRODUCT
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-40
⎯ ⎯
V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
-40
⎯ ⎯
V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-5
⎯ ⎯
V
I
E
= -100µA
Collector-Base Cutoff Current
I
CBO
⎯ ⎯
-100
nA
V
CB
= -30V, I
E
= 0
⎯ ⎯
-50 µA
V
CB
= -30V, I
E
= 0, T
A
= +150°C
Emitter-Base Cutoff Current
I
EBO
⎯ ⎯
-100 nA
V
EB
= -4V, I
C
= 0
ON CHARACTERISTICS (Note 9)
DC Current Gain
h
FE
300
⎯ ⎯
⎯
V
CE
= -2V, I
C
= -0.1A
260
⎯ ⎯ V
CE
= -2V, I
C
= -0.5A
210
⎯ ⎯
V
CE
= -2V, I
C
= -1A
100
⎯ ⎯ V
CE
= -2V, I
C
= -2A
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯ ⎯
-100
mV
I
C
= -100mA, I
B
= -1mA
⎯
45 -110
I
C
= -500mA, I
B
= -50mA
⎯ ⎯
-225
I
C
= -750mA, I
B
= -15mA
⎯ ⎯
-225
I
C
= -1A, I
B
= -50mA
⎯ ⎯
-350
I
C
= -2A, I
B
= -200mA
Equivalent On-Resistance
R
CE(SAT)
⎯
90 220
mΩ
I
C
= -500mA, I
B
= -50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯ ⎯
-1.1 V
I
C
= -2A, I
B
= -200mA
Base-Emitter Turn-on Voltage
V
BE(ON)
⎯ ⎯
-0.75 V
V
CE
= -2V, I
C
= -100mA
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f
T
100
⎯ ⎯
MHz
V
CE
= -10V, I
C
= -100mA,
f = 100MHz
Output Capacitance
C
ob
⎯ ⎯
28 pF
V
CB
= -10V, f = 1MHz
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0123 4567 8910
-I ,
LLE
EN
(A)
C
I = -1mA
B
I = -2mA
B
I = -3mA
B
I = -4mA
B
I = -5mA
B
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Figure 1 Typical Collector Current
vs. Collector-Emitter Voltage
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Figure 2 Typical DC Current Gain vs. Collector Current
10
100
10,000
h, D
EN
AIN
FE
1,000
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = -2V
CE
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