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SOT23 NPN SILICON PLANAR

HIGH PERFROMANCE TRANSISTOR

ISSUE 3 - OCTOBER 1995 ✪

FEATURES

* Low equivalent on-resistance; R

CE(sat)

400mΩ at 1A

* 1 Amp continuous current

tot

= 500 mW

COMPLEMENTARY TYPE  FMMT551

PARTMARKING DETAIL  451

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

80 V

Collector-Emitter Voltage V

CEO

60 V

Emitter-Base Voltage V

EBO

Peak Pulse Current I

Continuous Collector Current I

Base Current I

200 mA

Power Dissipation at T

amb

=25°C P

tot

500 mW

Operating and Storage Temperature Range T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

(BR)CBO

80 V

=100µA

Collector-Emitter

Sustaining Voltage

CEO(sus)

60 V I

=10mA*

Emitter-Base Breakdown

Voltage

(BR)EBO

=100µA

Collector Cut-Off Current I

CBO

0.1

µA

=60V

Emitter Cut-Off Current I

EBO

0.1

µA

=4V

Collector-Emitter

Saturation Voltage

CE(sat)

0.35 V I

=150mA, I

=15mA*

Base-Emitter

Saturation Voltage

BE(sat)

1.1 V I

=150mA, I

=15mA*

Static Forward Current

Transfer Ratio

150 I

=150mA, V

=10V*

=1A, V

=10V*

Transition

Frequency

150 MHz I

=50mA, V

=10V

f=100MHz

Output Capacitance C

obo

15 pF V

=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

FMMT451

3 - 109 3 - 108

FMMT451

TYPICAL CHARACTERISTICS

VCE(sat) v IC

I - Collector Current (Amps)

(

)

I -

Collector Current (Amps)

I -

Collector Current (Amps)

hFE v IC VBE(sat) v IC

I - Collector Current (Amps)

VBE(on) v IC

(

)

Switching Speeds

I - Collector Current (Amps)

tch

g t

100

Safe Operating Area

- Collector Emitter Voltage (V)

1100.1

0.1

0.01

1 2

Shrnutí obsahu

Strany 1 - HIGH PERFROMANCE TRANSISTOR

SOT23 NPN SILICON PLANARHIGH PERFROMANCE TRANSISTORISSUE 3 - OCTOBER 1995 ✪FEATURES* Low equivalent on-resistance; RCE(sat) 400mΩ at 1A* 1 Amp continu

Strany 2

SOT23 NPN SILICON PLANARHIGH PERFROMANCE TRANSISTORISSUE 3 - OCTOBER 1995 ✪FEATURES* Low equivalent on-resistance; RCE(sat) 400mΩ at 1A* 1 Amp continu

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