Diodes FMMT497 Uživatelský manuál stáhnout pdf

Issue 4 - November 2006 1 www.zetex.com

FMMT497

SOT23 NPN silicon planar high voltage high

performance transistor

Complementary part number - FMMT597

Device marking - 497

Absolute maximum ratings

Parameter Symbol Value Unit

Collector-base voltage V

CBO

300 V

Collector-emitter voltage V

CEO

300 V

Emitter-base voltage V

EBO

Continuous collector current I

500 mA

Peak pulse current I

Base current I

200 mA

Power dissipation at T

amb

=25°C P

tot

500 mW

Operating and storage temperature range T

stg

-55 to +150 °C

Pinout - top view

1 2 3 4 5 6

Shrnutí obsahu

Strany 1 - Absolute maximum ratings

Issue 4 - November 2006 1 www.zetex.com© Zetex Semiconductors plc 2006FMMT497SOT23 NPN silicon planar high voltage high performance transistorComplem

Strany 2

FMMT497Issue 4 - November 2006 2 www.zetex.com© Zetex Semiconductors plc 2006Electrical characteristics (at Tamb = 25°C unless otherwise stated)Parame

Strany 3 - Typical characteristics

FMMT497Issue 4 - November 2006 3 www.zetex.com© Zetex Semiconductors plc 2006Typical characteristicsVCE(sat)-(V)1A10mA 100mA1mA-55 °C+25 °C+100 °CIC/I

Strany 4 - Package outline - SOT23

FMMT497Issue 4 - November 2006 4 www.zetex.com© Zetex Semiconductors plc 2006Package outline - SOT23Note: Controlling dimensions are in millimeters. A

Strany 5 - Intentionally left blank

Strany 6

FMMT497Issue 4 - November 2006 6 www.zetex.com© Zetex Semiconductors plc 2006Zetex sales officesEuropeZetex GmbHKustermann-parkBalanstraße 59D-81541 M

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