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FZT851
Document Number DS33174 Rev. 3 - 2
4 of 7
www.diodes.com
January 2013
© Diodes Incorporated
FZT851
A
Product Line o
f
Diodes Incorporated
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
150 220
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage
BV
CER
150 220
V
I
C
= 1µA, R
B
1k
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
60 85
V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7 8.1
V
I
E
= 100µA
Collector Cut-off Current
I
CBO
<1
50
1
nA
µA
V
CB
= 120V
V
CB
= 120V, T
A
= +100°C
Collector Cut-off Current
I
CER
<1
50
1
nA
µA
V
CB
= 120V, R
B
1k
V
CB
= 120V, T
A
= +100°C
Emitter Cut-off Current
I
EBO
<1 10 nA
V
EB
= 6V
DC Current Gain (Note 10)
h
FE
100 200
I
C
= 10mA, V
CE
= 1V
100 200 300
I
C
= 2A, V
CE
= 1V
75 120
I
C
= 5A, V
CE
= 1V
25 50
I
C
= 10A, V
CE
= 1V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
50
mV
I
C
= 100mA, I
B
= 5mA
100
I
C
= 1A, I
B
= 50mA
170
I
C
= 2A, I
B
= 50mA
375
I
C
= 6A, I
B
= 300mA
Base-Emitter Saturation Voltage (Note 10)
V
BE
(
sat
)
1200 mV
I
C
= 6A, I
B
= 300mA
Base-Emitter Turn-On Voltage (Note 10)
V
BE
(
on
)
1150 mV
I
C
= 6A, V
CE
= 1V
Current Gain-Bandwidth Product (Note 10)
f
T
130
MHz
I
C
= 100mA, V
CE
= 10V,
f = 50MHz
Output Capacitance (Note 10)
C
obo
45
pF
V
CB
= 10V, f = 1MHz
Switching Times
t
on
45
ns
I
C
= 1A, V
CC
= 10V,
I
B1
= -I
B2
= 100mA
t
off
1100
Notes: 10. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%
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