Diodes DMN62D0SFD Uživatelský manuál stáhnout pdf (Strana 2)

DMN62D0SFD

Document number: DS35473 Rev. 3 - 2

2 of 6

www.diodes.com

January 2012

DMN62D0SFD

NEW PRODUCT

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage

DSS

60 V

Gate-Source Voltage

GSS

±20 V

Continuous Drain Current (Note 5) V

= 10V

Steady

State

= 25°C

= 70°C

540

430

t<10s

= 25°C

= 70°C

630

500

Continuous Drain Current (Note 5) V

= 5V

Steady

State

= 25°C

= 70°C

430

340

t<10s

= 25°C

= 70°C

510

410

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

1.0 A

Maximum Body Diode Forward Current (Note 5)

1.0 A

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Total Power Dissipation (Note 4)

0.43 W

Thermal Resistance, Junction to Ambient (Note 4)

Steady state

260 °C/W

t<10s 182 °C/W

Total Power Dissipation (Note 5)

0.89 W

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

140 °C/W

t<10s 98 °C/W

Thermal Resistance, Junction to Case (Note 5)

112 °C/W

Operating and Storage Temperature Range

STG

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

DSS

60 - - V

= 0V, I

= 10μA

Zero Gate Voltage Drain Current T

= 25°C I

DSS

- - 100 nA

= 60V, V

= 0V

Gate-Source Leakage

GSS

- - 10

μA

= ±20V, V

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

(

)

1.0 1.6 2.5 V

= 10V, I

= 1mA

Static Drain-Source On-Resistance

DS (ON)

- - 2

= 10V, I

= 500mA

- - 3

= 5V, I

= 50mA

Forward Transfer Admittance

- 130 - mS

= 3V, I

= 30mA

Diode Forward Voltage

- 0.8 1.2 V

= 0V, I

= 300mA

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

iss

- 30.2 -

= 25V, V

= 0V,

f = 1.0MHz

Output Capacitance

oss

- 4.4 -

Reverse Transfer Capacitance

rss

- 2.8 -

Gate Resistance

- 131 -

= 0V, V

= 0V, f = 1MHz

Total Gate Charge (V

= 4.5V) Q

- 0.39 -

= 10V, I

= 1A

Total Gate Charge (V

= 10.0V) Q

- 0.87 -

Gate-Source Charge

- 0.14 -

Gate-Drain Charge

- 0.09 -

Turn-On Delay Time

(

)

- 3.95 -

= 30V, I

= 200mA

= 10V, R

= 25Ω

Turn-On Rise Time

- 3.81 -

Turn-Off Delay Time

(

off

)

- 16.0 -

Turn-Off Fall Time

- 9.04 -

Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

6 .Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

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