Diodes DMN62D0SFD Uživatelský manuál Strana 3

  • Stažení
  • Přidat do mých příruček
  • Tisk
  • Strana
    / 6
  • Tabulka s obsahem
  • KNIHY
  • Hodnocené. / 5. Na základě hodnocení zákazníků
Zobrazit stránku 2
DMN62D0SFD
Document number: DS35473 Rev. 3 - 2
3 of 6
www.diodes.com
January 2012
© Diodes Incorporated
DMN62D0SFD
NEW PRODUCT
V , DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristic
DS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0.001
0.01
0.1
1
0.1 0.3 0.5 0.7 0.9 1.1
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 2 Maximum Forward Current
vs. Source-Drain Voltage
I, MAXIM
U
M
F
O
R
WA
R
D
C
U
R
R
EN
T
(A)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0 0.2 0.4 0.6 0.8 1.0
I , DRAIN CURRENT
D
Fig. 3 Typical On-Resistance vs.
Drain Current and Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5.0V
GS
0 0.2 0.4 0.6 0.8 1.0
I , DRAIN CURRENT
D
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 10V
GS
50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 5 On-Resistance Variation with Temperature
J
°
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V=V
I = 150A
GS
D
10
V=V
I = 300mA
GS
D
10
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
I= 1mA
D
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
J
°
Zobrazit stránku 2
1 2 3 4 5 6

Komentáře k této Příručce

Žádné komentáře