Diodes DMN65D8L Uživatelský manuál stáhnout pdf (Strana 2)

DMN65D8L

Document number: DS35923 Rev. 2 - 2

2 of 6

www.diodes.com

August 2012

DMN65D8L

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

DSS

60 V

Gate-Source Voltage

GSS

±20 V

Continuous Drain Current (Note 6) V

= 10V

Steady

State

= +25°C

= +70°C

310

240

Continuous Drain Current (Note 6) V

= 5V

Steady

State

= +25°C

= +70°C

270

210

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

800 mA

Maximum Body Diode Continuous Current (Note 5)

500 mA

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation

(Note 6)

370

(Note 5) 540

Thermal Resistance, Junction to Ambient

(Note 6)

348

°C/W

(Note 5) 241

Thermal Resistance, Junction to Case

(Note 5)

Operating and Storage Temperature Range

STG

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

DSS

⎯ ⎯

= 0V,

= 250µA

Zero Gate Voltage Drain Current

DSS

⎯ ⎯

1.0 µA

= 60V,

= 0V

Gate-Body Leakage

GSS

⎯ ⎯

±5 µA

±20V,

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

(

)

1.2

⎯

2.0 V

= V

= 250µA

Static Drain-Source On-Resistance

DS (ON)

⎯

2 3

Ω V

= 10V,

= 0.115A

⎯

2.5 4

Ω V

= 5V,

0.115A

Forward Transconductance

80 290

⎯

= 10V,

= 0.115A

Diode Forward Voltage

⎯

0.8

1.2

= 0V, I

= 115mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

iss

⎯

22.0

⎯

= 25V,

= 0V,

f = 1.0MHz

Output Capacitance

oss

⎯

3.2

⎯

Reverse Transfer Capacitance

rss

⎯

2.0

⎯

Gate Resistance

⎯

79.9

⎯ Ω

= 0V, V

= 0V, f = 1.0MHz

Total Gate Charge V

= 10V Q

⎯

0.87

⎯

= 10V, V

= 30V,

= 150mA

Total Gate Charge V

= 4.5V Q

⎯

0.43

⎯

Gate-Source Charge

⎯

0.11

⎯

Gate-Drain Charge

⎯

0.11

⎯

Turn-On Delay Time

(

)

⎯

2.7

⎯

= 30V, I

= 0.115A,

GEN

= 10V

GEN

= 25Ω

Turn-On Rise Time

⎯

2.8

⎯

Turn-Off Delay Time

(

off

)

⎯

12.6

⎯

Turn-Off Fall Time

⎯

7.3

⎯

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout

6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing

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