
DMN65D8L
Document number: DS35923 Rev. 2 - 2
3 of 6
www.diodes.com
August 2012
© Diodes Incorporated
DMN65D8L
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
DS
I, D
AIN
EN
(A)
D
0.01
0.1
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V , GATE-SOURCE VOLTAGE
GS
Figure 2. Typical Transfer Characteristics
I, D
AI
E
(A)
D
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 0.1 0.2 0.3 0.4 0.5 0.6
I , DRAIN CURRENT
D
Figure 3. Typical On-Resistance vs.
Drain Current and Temperature
, D
AIN-S
U
CE
N-
ESISTANCE ( )
DS(ON)
Ω
V= 5V
GS
V = 10V
GS
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 4. On-Resistance Variation with Temperature
J
°
, D
AI
-S
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V=5V
I = 115mA
GS
D
V=V
I = 115mA
GS
D
10
0
1
2
3
4
5
- 50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 5. On-Resistance Variation with Temperature
J
°
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(ON)
Ω
V= 5V
I= 115mA
GS
D
V=V
I= 115mA
GS
D
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6. Gate Threshold Variation vs. Ambient Temperature
J
°
V,
A
E
ES
LD V
L
A
E (V)
GS(th)
I= 1mA
D
I = 250µA
D
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